Martina Morassi

After earning a Master’s degree in Chemistry at the University of  Trieste (Italy), in 2015 I joined the French Center for Scientific Research as a PhD student in Physics. My thesis focused on the Molecular Beam Epitaxy (MBE) growth and characterization of III-N nitride nanowires for photovoltaic and piezoelectric applications. Now I am an engineer at C2N laboratory. My main activity consists in the MBE growth of III-V heterostructures for wave engineering (microcavities and related structures, quantum wells, quantum dots..) and spintronics. I am enthused and always open to new collaborative ventures in which ideas and know-how are shared day by day to deliver successful projects and new scientific knowledge.


THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
P. Quack et al
Observation of KPZ universal scaling in a one-dimensional polariton condensate
Q. Fontaine et al
Gap solitons in a 1D driven-dissipative topological lattice
N. Peret et al
Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecularbeam epitaxy
O. Saket et al
In situ X-Ray Diffraction Study of GaN Nucleation on Trasferred Graphene
C. Barbier et al
Selective Area Growth of GaN Nanowires on Graphene Nanodots
M. Morassi et al
Crystal Growth Des. 2020, 20, 2, 552–559
GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors
Q-C. Bui et al
Optical properties of GaN nanowires grown on chemical vapor deposited-graphene
L. Mancini et al
Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques
High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires
N. Jegenyes et al
Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
M. Morassi et al



Email address

Office number

10 Bd Thomas Gobert
91120 Palaiseau  FRANCE

Phone number
+33 1 70 27  04 67

POEM Platform

Research areas