COLLABORATIONS

As POEM concentrated high tech equipment into materials growth platform, one of its important missions is to provide state of the art samples and structures to the other physics laboratories.

The platform belongs to the Renatech Network. To collaborate with us, contact directly the manager of equipment or mail to C2N Renatech contact or submit a project on the National RENATECH web site.

Epitaxy facilities:

Different advanced growth technologies are available at C2N :

- MBE (molecular beam epitaxy) of III-V: InAs QDs, AlAs/GaAs microcavities, high mobility GaAlAs 2 dimensional  electron gas...

- MOVPE (metalorganic vapor phase epitaxy) of III-V and SiGeSn alloys: III-V heterostructurs on GaAs, InP, GaP, QCLs, VECSEL...

- UHV-CVD  (ultra-high vacuum chemical vapor deposition) of SiGe system, GaAs nanocrystals /SiO2...

- CBE (chemical beam epitaxy) of III-V and SiGe alloys

- PLIE(pulsed laser induced epitaxy) and GILD(gas immersion laser doping) for Si supraconductor

- PLD(pulsed laser deposition) for functionnal oxides (STO, PZT)

- CVD (chemical vapour deposition) for graphene, hBN, WSe2...

In situ or systematic  caracterisation facilities:

- XPS, AUGER, AES

- Raman spectroscopy

- Electrical measurments: I(V), Effet Hall, Van der Paw

- Photoluminescence

- FTIR

- UHV-STM-AFM