Pulsed Laser Deposition (PLD) of functional oxides

Pulsed Laser Deposition cluster

Contacts : Florian Disdier and Thomas Maroutian  

Growth of epitaxial oxide thin films:

Pulsed Laser Deposition is a versatile technique to grow epitaxial thin films and multilayers of complex materials such as functional oxides. Our research tool allows to transfer matter from ceramic target to single crystalline substrate with a pulsed excimer laser (248 nm wavelength). Typical conditions are 600 - 700 °C sample temperature and   10-3 - 10-1 mbar O2 or N2O chamber pressure.

The equipment can deposit oxide materials on various substrates like SrTiO3, Scandates (DyScO3), Sapphire and Silicon.

Oxide materials routinely available in the PLD machine are : 

  • Perovskite oxides : Titanates including Pb(Zr,Ti)O3, Manganites (La,Sr)MnO3 and also SrRuO3, LaAlO3.
  • Yttria - Stabilised - Zirconia (YSZ).
  • Vanadium Oxide (VO2)

Main research topics carried out with OXIDE Team concern the understanding and the integration of epitaxial oxide thin films for novel electronic and photonic devices, in particular:

  • Piezolectric materials for sensors and MEMS applications.
  • Photoinduced effects in ferroelectrics.
  • Crystalline oxides for silicon photonics.
  • In operando study of functional interfaces.

Figure 1: Pulsed Laser Deposition equipment

Figure 2: Pulsed Laser Deposition technic

Publications :


Tuning ultrafast photoinduced strain in ferroelectric-based devices
S.Matzen et al., Advanced Electronic Materials 5, 1800709 (2019)

DOI : https://doi.org/10.1002/aelm.201800709

C2N : https://www.c2n.universite-paris-saclay.fr/en/science-society/news/actu/112


Hight-quality crystalline yttria-stabilized-zirconia thin layer for photonic applications

G.Marcaud et al., Physical Review Materials 2, 035202 (2018)

DOI : https://doi.org/10.1103/PhysRevMaterials.2.035202

C2N : https://www.c2n.universite-paris-saclay.fr/en/science-society/news/actu/99


Low noise all-oxide magnetic tunnel junctions based on a La0.7Sr0.3MnO3/Nb:SrTiO3 interface 

G.Kurii et al., Applied Physics Letters 110, 082405 (2017)

DOI : https://doi.org/10.1063/1.4977173

HAL : https://hal-cea.archives-ouvertes.fr/cea-01503092


Fundings :