Growth of epitaxial oxide thin films:
Pulsed Laser Deposition is a versatile technique to grow epitaxial thin films and multilayers of complex materials such as functional oxides. Our research tool allows to transfer matter from ceramic target to single crystalline substrate with a pulsed excimer laser (248 nm wavelength). Typical conditions are 600 - 700 °C sample temperature and 10-3 - 10-1 mbar O2 or N2O chamber pressure.
The equipment can deposit oxide materials on various substrates like SrTiO3, Scandates (DyScO3), Sapphire and Silicon.
Oxide materials routinely available in the PLD machine are :
Main research topics carried out with OXIDE Team concern the understanding and the integration of epitaxial oxide thin films for novel electronic and photonic devices, in particular:
Figure 1: Pulsed Laser Deposition equipment
Figure 2: Pulsed Laser Deposition technic
Tuning ultrafast photoinduced strain in ferroelectric-based devices
S.Matzen et al., Advanced Electronic Materials 5, 1800709 (2019)
Hight-quality crystalline yttria-stabilized-zirconia thin layer for photonic applications
G.Marcaud et al., Physical Review Materials 2, 035202 (2018)
Low noise all-oxide magnetic tunnel junctions based on a La0.7Sr0.3MnO3/Nb:SrTiO3 interface
G.Kurii et al., Applied Physics Letters 110, 082405 (2017)