Material Growth & Development Facilities (POEM)

 

The material growth & development facilities (POEM) gathers all the C2N advanced growth facilities. 7 engineers develop materials and grow thin layer heterostructures for various scientific projects. They are responsible for the equipments and the development of innovative instrumentation. Epitaxy facilities are installed in a 700 m2 clean-room environment (ISO6) allowing interactions with the nanotechnology processing staff.
 

MBE FOR III-V SEMICONDUCTORS
 

Members: Antonella Cavanna (IR), Martina Morassi (IE), Laurent Travers (IE)

MOVPE & UHV CVD FOR III-V & SiGeSn MATERIALS

Members: Gregoire Beaudoin (IR), Géraldine Hallais (IR)

2D MATERIALS CVD & MBE

Members: Ali Madouri (IR), Antonella Cavanna (IR)

OXIDE PLD

Members: Davide Cammilleri (IE)

PLIE & GILD

Members: Géraldine Hallais (IR)

Magnetic Material Sputtering

Key Figures

  • 12 crystal growth equipments
  • 7 engineers
  • X faculty members
  • 14 researchers

 

Platform manager

 

News

January 2024: welcome toDavide Cammilleri who joined us for implementing equipment for the development of oxide thin films.

April 2023: JUICE Mission: achievement of more than 10 years of collaboration between C2N researchers & engineers and LERMA to develop Teraherzt state-of-the-art heterodyne components embedded in the Jupiter probe. The fisrt material step has been developped on material growth facilties (POEM) and nanoprocessing on PIMENT Facilities, Phynano group and LERMA engineers.

May 2023: conference ENRIS at C2N-Palaiseau

September 2022: Plaquette Centrale du C2N version numérique.pdf

February 2022: reception of new ECV Profilometer Equipment

January 2021: reception of the new III-V MOVCD

March 2020: COVID-19 Lock-down  

February 2020: Fourth Edition Nano-TN 2020

February 2020: reception of new TRT MBE

November 2019: Rencontre Thématique RENATECH "Croissance cristalline" at LTM-Grenoble/C2N

This pool of expertise is part of the Department of Materials. It supplies samples for national and international collaborations or projects. In particular, epitaxy is strongly involved in device activities including lasers and detectors for telecommunications, all-optical devices, transistors. Other important topics where epitaxy has a significant role are: spintronic, 2D electron gas, physics of nanostructures, photonic crystals, microcavities, functional oxides, hybrid materials...