Centre for Nanoscience
and Nanotechnology

  • CNRS

POEM Platform

Martina Morassi

After earning a Master’s degree in Chemistry at the University of  Trieste (Italy), in 2015 I joined the French Center for Scientific Research as a PhD student in Physics. My thesis focused on the Molecular Beam Epitaxy (MBE) growth and characterization of III-N nitride nanowires for photovoltaic and piezoelectric applications. Now I am an engineer at C2N laboratory. My main activity consists in the MBE growth of III-V heterostructures for wave engineering (microcavities and related structures, quantum wells, quantum dots..) and spintronics. I am enthused and always open to new collaborative ventures in which ideas and know-how are shared day by day to deliver successful projects and new scientific knowledge.

Publications

THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
P. Quack et al
2022, Applied Physics Letters, 1120, 171130
 
Observation of KPZ universal scaling in a one-dimensional polariton condensate
Q. Fontaine et al
2022, Nature
 
Gap solitons in a 1D driven-dissipative topological lattice
N. Peret et al
2022, Nature Physics
 
Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecularbeam epitaxy
O. Saket et al
2021, Nanotechnology 32 085705
 
In situ X-Ray Diffraction Study of GaN Nucleation on Trasferred Graphene
C. Barbier et al
Crystal Growth Des. 2020, 20,6, 4013-4019
 
Selective Area Growth of GaN Nanowires on Graphene Nanodots
M. Morassi et al
Crystal Growth Des. 2020, 20, 2, 552–559
 
GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors
Q-C. Bui et al
Appl. Sci. 2019, 9(17), 3528
 
Optical properties of GaN nanowires grown on chemical vapor deposited-graphene
L. Mancini et al
2019 Nanotechnology 30 214005
 
Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques
V. Piazza et al 2019 Nanotechnology 30 214006
 
High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires
N. Jegenyes et al
Nanomaterials 2018, 8(6), 367
 
Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
M. Morassi et al
 

 

 

Email address
martina.morassi. .c2n.upsaclay.fr

Office number
C211

Address
C2N
10 Bd Thomas Gobert
91120 Palaiseau  FRANCE

Phone number
+33 1 70 27  04 67

POEM Platform

Research areas