III-V Molecular Beam Epitaxy
C2N epitaxy relies on five epitaxial reactors dedicated to the elaboration of III-V compounds of various doping (Si, Be, C, Mg, Te), magnetic GaMnAs, dilute nitrides and dilute bismides. We can provide a very large variety of structure like III-V quantums dots, III-V nanowires, microcavities, high mobility 2D electron gases (2DEG) for studies of quantum transport, nanoelectronics and photonics.
