Molecular Beam Epitaxy (MBE) of III-V heterostructures

Our C21 MBE DZ system is optimized for the fabrication of III-V superlattices and heterostructures, with an ultimate precision (1-2%) over deposited thickness and alloy compositions. The most developed know-how associated to this MBE machine, concerns the fabrication of distributed Bragg reflectors based on the AlAs/GaAs system, containing various active structures, such as NIR quantum wells and quantum dots. Recently, the C21 activity is also focusing on InSb and AlInSb 2DEG epitaxy on GaAs.  

The chamber allows to grow on 2" wafers with a very good uniformity. It is equiped with: 

• Five effusion cells for Ga, Al, In
• Three cracker cells for P, As and Sb
• Two dopant cells Si and C
• BandiT and two optical pyrometers for temperature monitoring
• EZ-Curve to measure in real-time the sample bowing
• One interfaced reflective high-energy electron diffraction (RHEED) apparatus for real-time growth monitoring and user-friendly molecular flux calibration

Figure 1: MBE Riber Compact 21

Highlights:

• Topological lasing in 1D III-V lattice (2019)
• Very high finesse GaAs microdisk resonators (2017)
• Monolithic AlGaAs second-harmonic nanoantennas (2016)
• Near-optimal single-photon sources in the solid state (2016)
• Ultra-bright source of entangled photon pairs (2010)
• Terahertz coherent acoustic experiments with semiconductor superlattices

See more here