MOVPE & UHV-CVD for III-V & SiGeSn

The platform hosts several growth equipments by chemical vapor deposition. Its expertise in MOVPE and UHV-CVD are used for the development of III-V heterostructures and the integration of Si in III-V for instance, for photonics applications.

 

Members: Grégoire Beaudoin (IR), Isabelle Sagnes, Konstantinos Pantzas

Members: Géraldine Hallais (IE), Daniel Bouchier, Charles Renard, Laëtitia Vincent

STAFF

 

Grégoire Beaudoin (IR)

Géraldine Hallais (IE)

Daniel Bouchier

Isabelle Sagnes

Konstantinos Pantzas

Charles Renard

Laetitia Vincent


 

Highlights