Molecular Beam Epitaxy (MBE) for III-V Nanowires (NWs)

MBE Riber R32

Contacts: Laurent Travers  and Fabrice Oehler

The research activity of this MBE machine develops around the integration of Au-catalyzed and self-catalyzed III-V nanowires on Si substrates (see here). The chamber allows to grow on 3" wafers and is installed in a cluster connected to a chamber for Au deposition. The reactor is equiped with:

• Five effusion cells for Ga, Al, In, Si and Be
• Two cracker cells for P and As
• One BandiT and one optical pyrometer for temperature monitoring
• One reflective high-energy electron diffraction (RHEED) apparatus for real-time growth monitoring

Figure: MBE Riber R32