Centre for Nanoscience
and Nanotechnology

  • CNRS

POEM Platform

Metal-Organic Vapor-Phase Epitaxy

 

Metal-Organic Vapor-Phase Epitaxy (MOVPE), also known as OMVPE and MOCVD, is an advanced epitaxial technique that allows the growth of semiconductor heterostructures with atomic-layer precision. Compared to other techniques, MOVPE boasts high uniformity, high growth rates, and does not require ultra-high vacuum, making it the technique of choice for the semiconductor industry. The C2N is currently equipped with one high-end MOVPE reactor for the growth of III-V and IV semiconductors for photonics. In early 2021 a second, state of the art MOVPE reactor from world-leading  manufacturer AIXTRON will be installed.

 

VEECO D180 TURBODISK REACTOR

A PROVEN TOOL FOR III-V AND IV PHOTONICS

 

Based on a proven design, this showerhead reactor boasts very high uniformity: better than 1% over 4" on GaAs. Growth rates as high as 5µm/hour can be achieved on GaAs and InP-based materials without compromising this uniformity.

VERSATILE GAS PANEL

12 ORGANOMETALLIC AND 7 HYDRIDE SOURCES

Complete set of precursors for GaAs and InP based photonic devices and SiGeSn materials

  • 8 double dilution lines

  • Group V precursors:

    2xAsH3, 2xPH3

  • N-type dopants:

    Si2H6, H2S

  • Group IV precursors:

    Ge2H6, IBuGe, SiH4

  • Group IV precursors:

    Ge2H6, IBuGe, SiH4, SnCl4

  • P-type dopants:

    DeZn

GROWTH ON A VARIETY OF SUBSTRATE SIZES

From 6x2" to 1x6"

Contact us: mocvd@c2n.upsaclay.fr